Abstract
Phase control is critical for achieving high-performance CdTe cells when CuxTe is used as a back-contact for CdTe cells. CuxTe phases are mainly controlled by the Cu/Te ratio, and they can also be affected by post-heat-treatment temperature. Although Cu2Te has the highest conductivity, it is unstable and provides more Cu diffusion into the CdS and CdTe films. Cu diffusion into the CdS causes "cross-over", and Cu diffusion into the CdTe film creates Cu-related defects that lower photogenerated carrier lifetime and result in voltage-dependent collection. A "recontact" experiment clearly indicated that the mechanism giving rise to "roll-over" is the formation of Cu-related oxides, rather than the loss of Cu on the back-contact.
| Original language | American English |
|---|---|
| Pages (from-to) | 5798-5803 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 515 |
| Issue number | 15 |
| DOIs | |
| State | Published - 2007 |
NLR Publication Number
- NREL/JA-520-40021
Keywords
- Back-contact
- Cadmium telluride
- Copper telluride
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