Passivated Contact Formation Using Ion Implantation

David Young; Pauls Stradins; William Nemeth

Passivated Contact Formation Using Ion Implantation

David Young (Inventor)
, Pauls Stradins (Inventor)
, William Nemeth (Inventor)

Chemistry and Nanoscience

Research output: Patent

Abstract

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Original language	American English
Patent number	9,985,159 B2
Filing date	29/05/18
State	Published - 2018

NLR Publication Number

NREL/PT-5900-71668

Keywords

carrier recombination
energy conversion efficiency
passivated contacts
photovoltaics
surface passivation

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Cite this

@misc{7bb2fd4e66434a0f83fe4fda86229027,

title = "Passivated Contact Formation Using Ion Implantation",

abstract = "Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.",

keywords = "carrier recombination, energy conversion efficiency, passivated contacts, photovoltaics, surface passivation",

author = "David Young and Pauls Stradins and William Nemeth",

year = "2018",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

note = "9,985,159 B2",

}

TY - PAT

T1 - Passivated Contact Formation Using Ion Implantation

AU - Young, David

AU - Stradins, Pauls

AU - Nemeth, William

PY - 2018

Y1 - 2018

N2 - Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

AB - Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

KW - carrier recombination

KW - energy conversion efficiency

KW - passivated contacts

KW - photovoltaics

KW - surface passivation

M3 - Patent

M1 - 9,985,159 B2

Y2 - 2018/05/29

PB - National Laboratory of the Rockies (NLR)

ER -

Passivated Contact Formation Using Ion Implantation

Abstract

NLR Publication Number

Keywords

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Cite this