P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

X. Li; Y. Yan; T. A. Gessert; C. DeHart; C. L. Perkins; D. Young; T. J. Coutts

doi:10.1149/1.1554292

P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

X. Li
, Y. Yan
, T. A. Gessert
, C. DeHart
, C. L. Perkins
, D. Young
, T. J. Coutts

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

87 Scopus Citations

Abstract

We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 10¹⁵ to 1.0 × 10¹⁸ cm^-3 and the mobility is approximately 10^-1 cm² V^-1 s^-1. The minimum film resistivity achieved is ∼20 Ω cm.

Original language	American English
Pages (from-to)	C56-C58
Journal	Electrochemical and Solid-State Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1149/1.1554292 https://doi.org/10.1149/1.1554292
State	Published - 2003

NLR Publication Number

NREL/JA-520-32142

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title = "P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas",

abstract = "We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom \%. For concentrations greater than 2 atom \%, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.",

author = "X. Li and Y. Yan and Gessert, \{T. A.\} and C. DeHart and Perkins, \{C. L.\} and D. Young and Coutts, \{T. J.\}",

year = "2003",

doi = "10.1149/1.1554292",

language = "American English",

volume = "6",

pages = "C56--C58",

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TY - JOUR

T1 - P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

AU - Li, X.

AU - Yan, Y.

AU - Gessert, T. A.

AU - DeHart, C.

AU - Perkins, C. L.

AU - Young, D.

AU - Coutts, T. J.

PY - 2003

Y1 - 2003

N2 - We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.

AB - We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 1015 to 1.0 × 1018 cm-3 and the mobility is approximately 10-1 cm2 V-1 s-1. The minimum film resistivity achieved is ∼20 Ω cm.

UR - https://www.scopus.com/pages/publications/0037380835

U2 - 10.1149/1.1554292

DO - 10.1149/1.1554292

M3 - Article

AN - SCOPUS:0037380835

SN - 1099-0062

VL - 6

SP - C56-C58

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

P-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

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