Overcoming Doping Bottleneck by Using Surfactant and Strain

Su-Huai Wei; Junyi Zhu

doi:10.1007/s11706-011-0148-y

Overcoming Doping Bottleneck by Using Surfactant and Strain

Su-Huai Wei
, Junyi Zhu

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	335-341
Number of pages	7
Journal	Frontiers of Materials Science
Volume	5
Issue number	4
DOIs	https://doi.org/10.1007/s11706-011-0148-y
State	Published - 2011

NLR Publication Number

NREL/JA-5900-52711

Keywords

band gap
doping
semiconductor
strain
surfactant

Access to Document

10.1007/s11706-011-0148-y

Cite this

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title = "Overcoming Doping Bottleneck by Using Surfactant and Strain",

keywords = "band gap, doping, semiconductor, strain, surfactant",

author = "Su-Huai Wei and Junyi Zhu",

year = "2011",

doi = "10.1007/s11706-011-0148-y",

language = "American English",

volume = "5",

pages = "335--341",

journal = "Frontiers of Materials Science",

issn = "2095-025X",

publisher = "Higher Education Press Limited Company",

number = "4",

}

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T1 - Overcoming Doping Bottleneck by Using Surfactant and Strain

AU - Wei, Su-Huai

AU - Zhu, Junyi

PY - 2011

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KW - band gap

KW - doping

KW - semiconductor

KW - strain

KW - surfactant

U2 - 10.1007/s11706-011-0148-y

DO - 10.1007/s11706-011-0148-y

M3 - Article

SN - 2095-025X

VL - 5

SP - 335

EP - 341

JO - Frontiers of Materials Science

JF - Frontiers of Materials Science

IS - 4

ER -