Origins of Band-Gap Renormalization in Degenerately Doped Semiconductors: Article No. 075211

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Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.78.075211
State	Published - 2008

NLR Publication Number

@article{254d86eb71bb444b81ebbdc9f915c1f0,

title = "Origins of Band-Gap Renormalization in Degenerately Doped Semiconductors: Article No. 075211",

keywords = "band gap, semiconductors",

author = "NREL",

year = "2008",

doi = "10.1103/PhysRevB.78.075211",

language = "American English",

volume = "78",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "7",

}

TY - JOUR

T1 - Origins of Band-Gap Renormalization in Degenerately Doped Semiconductors

T2 - Article No. 075211

AU - NREL, null

PY - 2008

Y1 - 2008

KW - band gap

KW - semiconductors

U2 - 10.1103/PhysRevB.78.075211

DO - 10.1103/PhysRevB.78.075211

M3 - Article

SN - 1098-0121

VL - 78

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

ER -