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Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

  • S.A. Ringel
    • The Ohio State University

    Research output: NLR › Subcontract Report

    Abstract

    Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.
    Original languageAmerican English
    PublisherNational Laboratory of the Rockies (NLR)
    Number of pages12
    StatePublished - 2008

    Bibliographical note

    Work performed by The Ohio State University, Columbus, Ohio

    NLR Publication Number

    • NREL/SR-520-44250

    Keywords

    • compositional grading
    • dual junction
    • GE Subtrate
    • III-V multijunction concentrator
    • InGaP/InGaAs
    • lattice match
    • patterned Si:Ge/Si
    • PV
    • small area
    • solar cells
    • thermal conductivity

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