Optical Method for Determining the Doping Depth Profile in Silicon

Dean Levi

Optical Method for Determining the Doping Depth Profile in Silicon

Dean Levi (Inventor)

Chemistry and Nanoscience

Research output: Patent

Abstract

A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.

Original language	American English
Patent number	7,179,665 B1
State	Published - 2007

NLR Publication Number

NREL/PT-520-41407

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Cite this

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title = "Optical Method for Determining the Doping Depth Profile in Silicon",

abstract = "A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.",

author = "Dean Levi",

year = "2007",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

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T1 - Optical Method for Determining the Doping Depth Profile in Silicon

AU - Levi, Dean

PY - 2007

Y1 - 2007

N2 - A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.

AB - A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.

M3 - Patent

M1 - 7,179,665 B1

PB - National Laboratory of the Rockies (NLR)

ER -

Optical Method for Determining the Doping Depth Profile in Silicon

Abstract

NLR Publication Number

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