Abstract
A systematic study of the energy and time-resolved photolumienscence of GaInP/GaNxAs1-x double heterostructures has been performed for 0=x=1.3%. A large temperature-dependent optical-bowing coefficient (about 20-25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogencontent. Instead, the recombination rate is proportional to the majority-carrier concentration for x=0.3% and the carbon concentration for x=0.3%.
| Original language | American English |
|---|---|
| Number of pages | 8 |
| State | Published - 1998 |
| Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
| Conference | National Center for Photovoltaics Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 8/09/98 → 11/09/98 |
NLR Publication Number
- NREL/CP-520-25512
Fingerprint
Dive into the research topics of 'Optical Investigation of GaNAs'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver