On The Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers

doi:10.1109/PVSC.1997.654102

On The Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers

NREL

Research output: Contribution to conference › Paper

Abstract

The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.

Original language	American English
Pages	359-362
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654102
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-22945

NLR Publication Number

NREL/CP-520-24958

Access to Document

10.1109/PVSC.1997.654102

Cite this

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title = "On The Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers",

abstract = "The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.",

author = "NREL",

note = "For preprint version, including full text online document, see NREL/CP-520-22945; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654102",

language = "American English",

pages = "359--362",

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TY - CONF

T1 - On The Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers

AU - NREL, null

N1 - For preprint version, including full text online document, see NREL/CP-520-22945

PY - 1997

Y1 - 1997

N2 - The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.

AB - The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties; due to the presence of such Group Ia impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(In,Ga)Se2 thatattributes the enhancements in; electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu ) at the bulk and grain-boundary regions.

U2 - 10.1109/PVSC.1997.654102

DO - 10.1109/PVSC.1997.654102

M3 - Paper

SP - 359

EP - 362

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

On The Role of Na and Modifications to Cu(In,Ga)Se2 Absorber Materials Using Thin-MF (M=Na, K, Cs) Precursor Layers

Abstract

Conference

Bibliographical note

NLR Publication Number

Access to Document

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Cite this