Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

S. Francoeur; M. C. Hanna; A. G. Norman; A. Mascarenhas

doi:10.1063/1.1432754

Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

S. Francoeur
, M. C. Hanna
, A. G. Norman
, A. Mascarenhas

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

18 Scopus Citations

Abstract

Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.

Original language	American English
Pages (from-to)	243-245
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	2
DOIs	https://doi.org/10.1063/1.1432754 https://doi.org/10.1063/1.1432754
State	Published - 2002

NLR Publication Number

NREL/JA-590-32044

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title = "Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells",

abstract = "Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90\% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.",

author = "S. Francoeur and Hanna, \{M. C.\} and Norman, \{A. G.\} and A. Mascarenhas",

year = "2002",

doi = "10.1063/1.1432754",

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volume = "80",

pages = "243--245",

journal = "Applied Physics Letters",

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AU - Francoeur, S.

AU - Hanna, M. C.

AU - Norman, A. G.

AU - Mascarenhas, A.

PY - 2002

Y1 - 2002

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AB - Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal-organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.

UR - https://www.scopus.com/pages/publications/79956039334

U2 - 10.1063/1.1432754

DO - 10.1063/1.1432754

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Observation of Large Optical Anisotropy and Valence Band Splitting in AlInAs Self-Assembled Lateral Quantum Wells

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