Abstract
All-back-contact thin film photovoltaic devices in lattice back contact (LBC) configuration are studied by device simulation to set the requirements for achieving efficiency > 20% with lateral contact spacing > 50 µm. The numerical device model is first validated against published data for an LBC perovskite device and extended to predict the performance of Cd(Se,Te)-based polycrystalline devices. Recent advances in the electronic properties of Cd(Se,Te) films have made high efficiency LBC devices feasible with industrially-scalable contact dimensions. Constraints on bulk, interface, and contact properties are quantified and discussed
| Original language | American English |
|---|---|
| Number of pages | 8 |
| Journal | Journal of Applied Physics |
| Volume | 127 |
| Issue number | 22 |
| DOIs | |
| State | Published - 2020 |
NLR Publication Number
- NREL/JA-5F00-76913
Keywords
- CdTe
- crystallographic defects
- interface defects
- passivation
- perovskites
- photovoltaics
- polycrystalline material
- semiconductor device modeling
- semiconductors
- solar cells
- thin films
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