Nucleation Rate Reduction Through Stress Relief of Thermally Annealed Hydrogenated Amorphous Silicon Films: Article No. 173509

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NLR Publication Number

@article{ef6b824037964db4928c5120e0914ef9,

title = "Nucleation Rate Reduction Through Stress Relief of Thermally Annealed Hydrogenated Amorphous Silicon Films: Article No. 173509",

author = "Matthew Dabney and \{Van Hest\}, Maikel and David Ginley and A.H. Mahan",

year = "2013",

doi = "10.1063/1.4803686",

language = "American English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Nucleation Rate Reduction Through Stress Relief of Thermally Annealed Hydrogenated Amorphous Silicon Films

T2 - Article No. 173509

AU - Dabney, Matthew

AU - Van Hest, Maikel

AU - Ginley, David

AU - Mahan, A.H.

PY - 2013

Y1 - 2013

UR - https://www.scopus.com/pages/publications/84877774515

U2 - 10.1063/1.4803686

DO - 10.1063/1.4803686

M3 - Article

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

ER -