Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

C. Honsberg; W.A. Doolittle; I. Ferguson; Martha Symko-Davies

Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

C. Honsberg
, W.A. Doolittle
, I. Ferguson
, Martha Symko-Davies (NLR Technical Monitor)

Strategic Energy Analysis and Decision Sciences

University of Delaware

Research output: NLR › Subcontract Report

Abstract

The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.

Original language	American English
Publisher	National Laboratory of the Rockies (NLR)
Number of pages	15
State	Published - 2008

Bibliographical note

Work performed by the University of Delaware, Newark, Delaware

NLR Publication Number

NREL/SR-520-44186

Keywords

bandgap
devices
high efficiency
INGAN
ohmic contact
open-circuit voltages
optimization
phase separation
PV
solar cells

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@misc{a7d023a770b6444293c8d79acfd94040,

title = "Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008",

abstract = "The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.",

keywords = "bandgap, devices, high efficiency, INGAN, ohmic contact, open-circuit voltages, optimization, phase separation, PV, solar cells",

author = "C. Honsberg and W.A. Doolittle and I. Ferguson and Martha Symko-Davies",

note = "Work performed by the University of Delaware, Newark, Delaware",

year = "2008",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Other",

}

TY - GEN

T1 - Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

AU - Honsberg, C.

AU - Doolittle, W.A.

AU - Ferguson, I.

A2 - Symko-Davies, Martha

N1 - Work performed by the University of Delaware, Newark, Delaware

PY - 2008

Y1 - 2008

N2 - The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.

AB - The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.

KW - bandgap

KW - devices

KW - high efficiency

KW - INGAN

KW - ohmic contact

KW - open-circuit voltages

KW - optimization

KW - phase separation

KW - PV

KW - solar cells

M3 - Subcontract Report

PB - National Laboratory of the Rockies (NLR)

ER -

Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

Abstract

Bibliographical note

NLR Publication Number

Keywords

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