Abstract
This report describes work performed to provide details of the microstructure in high-quality hydrogenated amorphous and microcrystalline silicon and related alloys on the nanometer size scale. The materials studied were prepared by current state-of-the-art deposition methods as well as by new and emerging deposition techniques. The purpose is to establish the role of nanostructural features incontrolling the opto-electronic and photovoltaic properties. The approach centered around the use of the uncommon technique of small-angle scattering of both x-rays (SAXS) and neutrons (SANS). SAXS has already been established as highly sensitive to microvoids and columnar-like microstructure. A major goal of this research was to establish the ability of SANS to detect hydrogen inhomogeneity indevice-quality materials. This was demonstrated and new information on various materials have been provided. Conventional X-ray diffraction techniques were used to examine medium-range order and microcrystallinity, particularly near the boundary between amorphous and microcrystalline material.
| Original language | American English |
|---|---|
| Publisher | National Laboratory of the Rockies (NLR) |
| Number of pages | 80 |
| State | Published - 2002 |
Bibliographical note
Work performed by Colorado School of Mines, Golden, ColoradoNLR Publication Number
- NREL/SR-520-31908
Keywords
- a-SiGe:H
- amorphous silicon solar cell
- microcrystallinity
- polymorphous Si:H
- PV
- small-angle neutron scattering
- small-angle x-ray scattering (SAXS)
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