Nanoscale Tracking of the High-Temperature Spin-State Transition in LaCoO3

The high-temperature spin and electronic transitions in LaCoO3 have recently been leveraged to create neuromorphic (brain-inspired) devices. While these devices have shown the potential for impactful functionality in next-generation computing systems, the nanoscale dynamics of the spin and electronic transitions that underlie their operation are not well understood. Inhomogeneities related to interfaces, electrode contacts, strain, and crystal defects can all affect device performance, making nanoscale characterization of the transitions essential for producing consistent and reliable devices. Here, we demonstrate the first nanoscale in situ measurement of the spin transition in LaCoO3 at device-relevant temperatures (25-325 degrees C) over length scales of tens of nanometers using STEM-EELS. This measurement is enabled by an Al2O3 coating, which prevents unwanted reduction of the LaCoO3 specimen at high temperature and vacuum. The detailed understanding of LaCoO3 transition dynamics enabled by such measurements will be crucial for optimizing LaCoO3-based neuromorphic devices and increasing reliability for real-world application.