MOVPE Growth and Characteristics of CdTe on InSb Substrates

Research output: Contribution to journal › Article

Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

NLR Publication Number

@article{b6595b8b48c541ca8795ce65ec3c1f45,

title = "MOVPE Growth and Characteristics of CdTe on InSb Substrates",

author = "NREL",

note = "Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York",

year = "1986",

doi = "10.1016/0022-0248(86)90340-4",

language = "American English",

volume = "77",

pages = "480--484",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - MOVPE Growth and Characteristics of CdTe on InSb Substrates

AU - NREL, null

N1 - Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

PY - 1986

Y1 - 1986

U2 - 10.1016/0022-0248(86)90340-4

DO - 10.1016/0022-0248(86)90340-4

M3 - Article

SN - 0022-0248

VL - 77

SP - 480

EP - 484

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-3

ER -