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Minority-Carrier Lifetime Studies of Silicon Spheres
R. K. Ahrenkiel
, D. H. Levi
, John Arch
Materials Science
National Renewable Energy Laboratory
Texas Instruments
Research output
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Contribution to conference
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Paper
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peer-review
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Engineering
Carrier Lifetime
100%
Minority Carriers
100%
Melting Point
100%
Injection Level
66%
Grade Silicon
66%
Radio Frequency
66%
Solar Cell
66%
Recombination Lifetime
33%
Surface Region
33%
Electrical Performance
33%
Silicon Particle
33%
Excitation Source
33%
Getters
33%
Physics
Minority Carriers
100%
Melting Point
100%
Carrier Lifetime
100%
Solar Cell
66%
Photoconductivity
66%
YAG Laser
33%
Single Crystal
33%
Holes (Electron Deficiencies)
33%
Crystallization
33%
Getters
33%
Chemistry
Silicon
100%
Melting Point
60%
Photoconductivity
40%
Solar Cell
40%
Electron-Hole Recombination
20%
Crystallization
20%
Single Crystalline Solid
20%
Shallow Trap
20%
electronics
20%
Material Science
Silicon
100%
Carrier Lifetime
100%
Solar Cell
40%
Feedstock
20%
Single Crystal
20%
Crystallization
20%