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Millimeter-Wave Loaded Line Ferroelectric Phase Shifters

  • A. Kozyrev
  • , A. Ivanov
  • , O. Soldatenkov
  • , A. Tumarkin
  • , S. Ivanova
  • , T. Kaydanova
  • , J. D. Perkins
  • , J. Alleman
  • , D. S. Ginley
  • , L. Sengupta
  • , L. Chiu
  • , X. Zhang
  • St. Petersburg State Electrotechnical University
  • National Renewable Energy Laboratory
  • Paratek Microwave, Inc.

Research output: Contribution to journalArticlepeer-review

17 Scopus Citations

Abstract

Ferroelectric loaded line phase shifters operating at millimeter waves for phased array antenna applications are presented. Phase shifters were manufactured on using Ba 0.3Sr 0.7TiO 3 thin films. The magnetron sputtering process was used to fabricate these Ba 0.3Sr 0.7TiO 3 ferroelectric films with a thickness ∼1 μm. The phase shifter operating at V-band (60 GHz) demonstrated continuous phase shift up to 220 deg and figure of merit (FOM) 22 deg/dB. The phase shifter operating at Ka-band (30 GHz) showed phase shift up to 360 deg and FOM 40 deg/dB.

Original languageAmerican English
Pages (from-to)847-852
Number of pages6
JournalIntegrated Ferroelectrics
Volume55
Issue number1
DOIs
StatePublished - 2003

NLR Publication Number

  • NREL/JA-520-36764

Keywords

  • Ferroelectric thin films
  • Microwave devices
  • Phase shifters
  • Tunable

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