Microscopic Origin of the Doping Limits in Semiconductors and Wide-Gap Materials and Recent Developments in Overcoming These Limits: A Review

doi:10.1088/0953-8984/14/34/201

Microscopic Origin of the Doping Limits in Semiconductors and Wide-Gap Materials and Recent Developments in Overcoming These Limits: A Review

NREL

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	R881-R903
Journal	Journal of Physics Condensed Matter
Volume	14
DOIs	https://doi.org/10.1088/0953-8984/14/34/201
State	Published - 2002

NLR Publication Number

NREL/JA-590-33865

Access to Document

10.1088/0953-8984/14/34/201

Cite this

@article{00e82719bdb24c6193e9816ae822ffae,

title = "Microscopic Origin of the Doping Limits in Semiconductors and Wide-Gap Materials and Recent Developments in Overcoming These Limits: A Review",

author = "NREL",

year = "2002",

doi = "10.1088/0953-8984/14/34/201",

language = "American English",

volume = "14",

pages = "R881--R903",

journal = "Journal of Physics Condensed Matter",

issn = "0953-8984",

publisher = "Institute of Physics",

}

TY - JOUR

T1 - Microscopic Origin of the Doping Limits in Semiconductors and Wide-Gap Materials and Recent Developments in Overcoming These Limits: A Review

AU - NREL, null

PY - 2002

Y1 - 2002

U2 - 10.1088/0953-8984/14/34/201

DO - 10.1088/0953-8984/14/34/201

M3 - Article

SN - 0953-8984

VL - 14

SP - R881-R903

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

ER -