Methods of Forming Interdigitated Back Contact Solar Cells

David Young; Myles Steiner; John Simon

Methods of Forming Interdigitated Back Contact Solar Cells

David Young (Inventor)
, Myles Steiner (Inventor)
, John Simon (Inventor)

Chemistry and Nanoscience

Research output: Patent

Abstract

Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Original language	American English
Patent number	10,749,052 B2
Filing date	18/08/20
State	Published - 2020

NLR Publication Number

NREL/PT-5900-77720

Keywords

emitter
n-type
p-type
passivated back
solar cells
Zn layer

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/10749052

Cite this

@misc{fe6eec024ef340a4b5a3886a29590f5f,

title = "Methods of Forming Interdigitated Back Contact Solar Cells",

abstract = "Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.",

keywords = "emitter, n-type, p-type, passivated back, solar cells, Zn layer",

author = "David Young and Myles Steiner and John Simon",

year = "2020",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

note = "10,749,052 B2",

}

TY - PAT

T1 - Methods of Forming Interdigitated Back Contact Solar Cells

AU - Young, David

AU - Steiner, Myles

AU - Simon, John

PY - 2020

Y1 - 2020

N2 - Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

AB - Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

KW - emitter

KW - n-type

KW - p-type

KW - passivated back

KW - solar cells

KW - Zn layer

M3 - Patent

M1 - 10,749,052 B2

Y2 - 2020/08/18

PB - National Laboratory of the Rockies (NLR)

ER -

Methods of Forming Interdigitated Back Contact Solar Cells

Abstract

NLR Publication Number

Keywords

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Cite this