Methods of Exfoliating Single Crystal Materials

Andrew Norman; Celeste Melamed; Eric Toberer; William McMahon

Methods of Exfoliating Single Crystal Materials

Andrew Norman (Inventor)
, Celeste Melamed (Inventor)
, Eric Toberer (Inventor)
, William McMahon (Inventor)

Colorado School of Mines

Research output: Patent

Abstract

Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi.sub.2Se.sub.3 (0001) substrates in an MOCVD reactor.

Original language	American English
Patent number	11,302,531 B2
Filing date	12/04/22
State	Published - 2022

NLR Publication Number

NREL/PT-5K00-82642

Keywords

MOCVD reactor
selenide-based 2D layered material
semiconductor device

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Cite this

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title = "Methods of Exfoliating Single Crystal Materials",

abstract = "Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi.sub.2Se.sub.3 (0001) substrates in an MOCVD reactor.",

keywords = "MOCVD reactor, selenide-based 2D layered material, semiconductor device",

author = "Andrew Norman and Celeste Melamed and Eric Toberer and William McMahon",

year = "2022",

language = "American English",

type = "Patent",

note = "11,302,531 B2",

}

TY - PAT

T1 - Methods of Exfoliating Single Crystal Materials

AU - Norman, Andrew

AU - Melamed, Celeste

AU - Toberer, Eric

AU - McMahon, William

PY - 2022

Y1 - 2022

N2 - Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi.sub.2Se.sub.3 (0001) substrates in an MOCVD reactor.

AB - Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi.sub.2Se.sub.3 (0001) substrates in an MOCVD reactor.

KW - MOCVD reactor

KW - selenide-based 2D layered material

KW - semiconductor device

M3 - Patent

M1 - 11,302,531 B2

Y2 - 2022/04/12

ER -

Methods of Exfoliating Single Crystal Materials

Abstract

NLR Publication Number

Keywords

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