Abstract
Metamorphic GaInAs enables photovoltaic devices optimized for a wide range of bandgaps between 0.35 and 1.41 eV. We have developed compositionally graded buffers made of GaInP and AlGaInAs to enable growth of these devices on GaAs substrates with low dislocation densities and high performance. We present results for devices grown on both graded buffer materials with device bandgaps in the range 0.58-1.41 eV and compare the benefits and drawbacks of each material system. These results enable high performance for applications such as thermophotovoltaics and optical power transmission using high power lasers.
| Original language | American English |
|---|---|
| Number of pages | 4 |
| DOIs | |
| State | Published - 2025 |
| Event | SPIE Photonics West 2025 - San Francisco, California Duration: 25 Jan 2025 → 30 Jan 2025 |
Conference
| Conference | SPIE Photonics West 2025 |
|---|---|
| City | San Francisco, California |
| Period | 25/01/25 → 30/01/25 |
NLR Publication Number
- NREL/CP-5900-91342
Keywords
- III-V
- laser power conversion
- LPC
- metamorphic epitaxy
- multijunction
- photo converters
- photovoltaic
- PV
- semiconductor
- thermophotovoltaic
- TPV
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