Measurement of Charge-Separation Potentials in GaAs1-xNx

S. W. Johnston; R. K. Ahrenkiel; C. W. Tu; Y. G. Hong

doi:10.1116/1.1603281

Measurement of Charge-Separation Potentials in GaAs1-xNx

S. W. Johnston
, R. K. Ahrenkiel
, C. W. Tu
, Y. G. Hong

Materials Science

University of California at San Diego

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

A description about measurement of charge-separation potentials in GaAs_1-xN_x films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

Original language	American English
Pages (from-to)	1765-1769
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	5
DOIs	https://doi.org/10.1116/1.1603281 https://doi.org/10.1116/1.1603281
State	Published - Sep 2003

NLR Publication Number

NREL/JA-520-31773

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title = "Measurement of Charge-Separation Potentials in GaAs1-xNx",

abstract = "A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.",

author = "Johnston, \{S. W.\} and Ahrenkiel, \{R. K.\} and Tu, \{C. W.\} and Hong, \{Y. G.\}",

year = "2003",

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issn = "0734-2101",

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AU - Johnston, S. W.

AU - Ahrenkiel, R. K.

AU - Tu, C. W.

AU - Hong, Y. G.

PY - 2003/9

Y1 - 2003/9

N2 - A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

AB - A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

UR - https://www.scopus.com/pages/publications/0142059003

U2 - 10.1116/1.1603281

DO - 10.1116/1.1603281

M3 - Article

AN - SCOPUS:0142059003

SN - 0734-2101

VL - 21

SP - 1765

EP - 1769

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Measurement of Charge-Separation Potentials in GaAs1-xNx

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