Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport

T. H. Wang; T. F. Ciszek; M. Page; Y. Yan; R. Bauer; Q. Wang; J. Casey; R. Reedy; R. Matson; R. Ahrenkiel; M. M. Al-Jassim

doi:10.1109/PVSC.2000.915773

Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport

T. H. Wang
, T. F. Ciszek
, M. Page
, Y. Yan
, R. Bauer
, Q. Wang
, J. Casey
, R. Reedy
, R. Matson
, R. Ahrenkiel
, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

8 Scopus Citations

Abstract

Fast (3 μm/min) and direct deposition of large-grain (∼20 μn) polycrystalline silicon layers on foreign substrates at intermediate temperatures (∼900°C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm²/Vs at a doping density of 5.5×10¹⁷ cm^-3 was measured in an as deposited material. After hydrogen passivation, it increased to 76 cm²/V/s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N⁺-a-Si/ia-Si/APIVT-Si(absorber)/P⁺-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.

Original language	American English
Pages	138-141
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2000.915773
State	Published - 2000
Event	Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000 - Anchorage, Alaska Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000
City	Anchorage, Alaska
Period	15/09/00 → 22/09/00

NLR Publication Number

NREL/CP-590-28949

Access to Document

10.1109/PVSC.2000.915773

Cite this

Wang, T. H., Ciszek, T. F., Page, M., Yan, Y., Bauer, R., Wang, Q., Casey, J., Reedy, R., Matson, R., Ahrenkiel, R., & Al-Jassim, M. M. (2000). Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport. 138-141. Paper presented at Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000, Anchorage, Alaska. https://doi.org/10.1109/PVSC.2000.915773

@conference{b37d4d14b8124f5796d94d77f5587df8,

title = "Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport",

abstract = "Fast (3 μm/min) and direct deposition of large-grain (∼20 μn) polycrystalline silicon layers on foreign substrates at intermediate temperatures (∼900°C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm2/Vs at a doping density of 5.5×1017 cm-3 was measured in an as deposited material. After hydrogen passivation, it increased to 76 cm2/V/s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N+-a-Si/ia-Si/APIVT-Si(absorber)/P+-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.",

author = "Wang, \{T. H.\} and Ciszek, \{T. F.\} and M. Page and Y. Yan and R. Bauer and Q. Wang and J. Casey and R. Reedy and R. Matson and R. Ahrenkiel and Al-Jassim, \{M. M.\}",

year = "2000",

doi = "10.1109/PVSC.2000.915773",

language = "American English",

pages = "138--141",

note = "Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

}

Wang, TH, Ciszek, TF, Page, M, Yan, Y, Bauer, R, Wang, Q, Casey, J, Reedy, R, Matson, R, Ahrenkiel, R & Al-Jassim, MM 2000, 'Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport', Paper presented at Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000, Anchorage, Alaska, 15/09/00 - 22/09/00 pp. 138-141. https://doi.org/10.1109/PVSC.2000.915773

TY - CONF

T1 - Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport

AU - Wang, T. H.

AU - Ciszek, T. F.

AU - Page, M.

AU - Yan, Y.

AU - Bauer, R.

AU - Wang, Q.

AU - Casey, J.

AU - Reedy, R.

AU - Matson, R.

AU - Ahrenkiel, R.

AU - Al-Jassim, M. M.

PY - 2000

Y1 - 2000

N2 - Fast (3 μm/min) and direct deposition of large-grain (∼20 μn) polycrystalline silicon layers on foreign substrates at intermediate temperatures (∼900°C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm2/Vs at a doping density of 5.5×1017 cm-3 was measured in an as deposited material. After hydrogen passivation, it increased to 76 cm2/V/s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N+-a-Si/ia-Si/APIVT-Si(absorber)/P+-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.

AB - Fast (3 μm/min) and direct deposition of large-grain (∼20 μn) polycrystalline silicon layers on foreign substrates at intermediate temperatures (∼900°C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm2/Vs at a doping density of 5.5×1017 cm-3 was measured in an as deposited material. After hydrogen passivation, it increased to 76 cm2/V/s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N+-a-Si/ia-Si/APIVT-Si(absorber)/P+-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.

UR - https://www.scopus.com/pages/publications/84949552266

U2 - 10.1109/PVSC.2000.915773

DO - 10.1109/PVSC.2000.915773

M3 - Paper

AN - SCOPUS:84949552266

SP - 138

EP - 141

T2 - Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport

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