Abstract
This report describes how Cornell University researchers developmed several low-cost and simple barrier layers and tested their effectiveness both analytically (by SIMS) and by evaluating the electrical characteristics of devices fabricated on barrier-coated substrates. Devices fabricated included both majority-carrier devices (thin-film transistors) and minority-carrier devices (p-i-n junctiondiodes simulating solar cells) using various deposition techniques including the chemical vapor deposition of polysilicon from silane at low pressures (at Cornell University) and from dichlorosilane at atmospheric pressure (cooperation with Neudeck at Perdue University). The structure of the films deposited was investigated by using TEM and X-ray analysis. The performance of the minority- andmajority-carrier devices fabricated on barrier-coated glass ceramic substrates was found to be identical to devices fabricated on control substrates of oxidized silicon and fused silica.
| Original language | American English |
|---|---|
| Publisher | National Laboratory of the Rockies (NLR) |
| Number of pages | 52 |
| State | Published - 2002 |
Bibliographical note
Work performed by Cornell University, Ithaca, New YorkNLR Publication Number
- NREL/SR-590-32454
Keywords
- barrier layers
- bias temperature stress (BTS)
- chemical vapor deposition (CVD)
- glass-ceramic substrates
- low-cost glass
- optical transparency
- P-I-N junction diodes
- PV
- silicon solar cells
- thermal expansion
- thin film
- transistors
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