Local Built-In Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films

C. S. Jiang; R. Noufi; J. A. AbuShama; K. Ramanathan; H. R. Moutinho; J. Pankow; M. M. Al-Jassim

doi:10.1063/1.1737796

Local Built-In Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films

C. S. Jiang
, R. Noufi
, J. A. AbuShama
, K. Ramanathan
, H. R. Moutinho
, J. Pankow
, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

197 Scopus Citations

Abstract

The local built-in potential on grain boundaries of Cu(In,Ga)Se ₂ (CIGS) films were measured using scanning Kelvin probe microscopy (SKPM). The local built-in potential that arose from the positively charged GB represented an energetic barrier, which attracted electrons and repelled holes from the grain boundary. This was found to benefit the three-dimensional collection of minority carriers. The GB effect on the photovoltaic performance was also studied.

Original language	American English
Pages (from-to)	3477-3479
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1737796 https://doi.org/10.1063/1.1737796
State	Published - 3 May 2004

NLR Publication Number

NREL/JA-520-35437

Access to Document

Cite this

@article{4a0a07e500ce4b05a485bac1aaaa43cd,

title = "Local Built-In Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films",

abstract = "The local built-in potential on grain boundaries of Cu(In,Ga)Se 2 (CIGS) films were measured using scanning Kelvin probe microscopy (SKPM). The local built-in potential that arose from the positively charged GB represented an energetic barrier, which attracted electrons and repelled holes from the grain boundary. This was found to benefit the three-dimensional collection of minority carriers. The GB effect on the photovoltaic performance was also studied.",

author = "Jiang, \{C. S.\} and R. Noufi and AbuShama, \{J. A.\} and K. Ramanathan and Moutinho, \{H. R.\} and J. Pankow and Al-Jassim, \{M. M.\}",

year = "2004",

month = may,

day = "3",

doi = "10.1063/1.1737796",

language = "American English",

volume = "84",

pages = "3477--3479",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Local Built-In Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films

AU - Jiang, C. S.

AU - Noufi, R.

AU - AbuShama, J. A.

AU - Ramanathan, K.

AU - Moutinho, H. R.

AU - Pankow, J.

AU - Al-Jassim, M. M.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - The local built-in potential on grain boundaries of Cu(In,Ga)Se 2 (CIGS) films were measured using scanning Kelvin probe microscopy (SKPM). The local built-in potential that arose from the positively charged GB represented an energetic barrier, which attracted electrons and repelled holes from the grain boundary. This was found to benefit the three-dimensional collection of minority carriers. The GB effect on the photovoltaic performance was also studied.

AB - The local built-in potential on grain boundaries of Cu(In,Ga)Se 2 (CIGS) films were measured using scanning Kelvin probe microscopy (SKPM). The local built-in potential that arose from the positively charged GB represented an energetic barrier, which attracted electrons and repelled holes from the grain boundary. This was found to benefit the three-dimensional collection of minority carriers. The GB effect on the photovoltaic performance was also studied.

UR - https://www.scopus.com/pages/publications/2542484644

U2 - 10.1063/1.1737796

DO - 10.1063/1.1737796

M3 - Article

AN - SCOPUS:2542484644

SN - 0003-6951

VL - 84

SP - 3477

EP - 3479

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Local Built-In Potential on Grain Boundary of Cu(In,Ga)Se2 Thin Films

Abstract

NLR Publication Number

Access to Document

Other files and links

Fingerprint

Cite this