Light-Induced Degradation in Different p-i-n and n-i Schottky Barrier Solar Cell Structures

Light-Induced Degradation in Different p-i-n and n-i Schottky Barrier Solar Cell Structures

NREL

Research output: Contribution to conference › Paper

Abstract

The issue of the lack of reliable correlation between the characteristics of high performance cells and their intrinsic material properties is addressed in this document. A systematic approach to the question of separating the effects of the bulk from those of the interface is described which is based on the selfconsistent analysis on a variety of both materials and solar cell properties in theannealed and degraded state. The results presented are on characteristics which include not only light I-V but also dark I-V and QE of p-i-n solar cells with different thicknesses as well as on n-i-metal Schottky barrier cell structures. These results are discussed in terms of how the contributions of the bulk i-layers can be established and quantified in the annealed as well as the degradedstates. An example is presented for such a quantitative correlation for a Schottky barrier cell structure in the annealed and degraded states.

Original language	American English
Pages	1125-1128
Number of pages	4
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by The Pennsylvania State University, University Park, Pennsylvania

NLR Publication Number

NREL/CP-22511

Cite this

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title = "Light-Induced Degradation in Different p-i-n and n-i Schottky Barrier Solar Cell Structures",

abstract = "The issue of the lack of reliable correlation between the characteristics of high performance cells and their intrinsic material properties is addressed in this document. A systematic approach to the question of separating the effects of the bulk from those of the interface is described which is based on the selfconsistent analysis on a variety of both materials and solar cell properties in theannealed and degraded state. The results presented are on characteristics which include not only light I-V but also dark I-V and QE of p-i-n solar cells with different thicknesses as well as on n-i-metal Schottky barrier cell structures. These results are discussed in terms of how the contributions of the bulk i-layers can be established and quantified in the annealed as well as the degradedstates. An example is presented for such a quantitative correlation for a Schottky barrier cell structure in the annealed and degraded states.",

author = "NREL",

note = "Work performed by The Pennsylvania State University, University Park, Pennsylvania; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

language = "American English",

pages = "1125--1128",

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T1 - Light-Induced Degradation in Different p-i-n and n-i Schottky Barrier Solar Cell Structures

AU - NREL, null

N1 - Work performed by The Pennsylvania State University, University Park, Pennsylvania

PY - 1996

Y1 - 1996

N2 - The issue of the lack of reliable correlation between the characteristics of high performance cells and their intrinsic material properties is addressed in this document. A systematic approach to the question of separating the effects of the bulk from those of the interface is described which is based on the selfconsistent analysis on a variety of both materials and solar cell properties in theannealed and degraded state. The results presented are on characteristics which include not only light I-V but also dark I-V and QE of p-i-n solar cells with different thicknesses as well as on n-i-metal Schottky barrier cell structures. These results are discussed in terms of how the contributions of the bulk i-layers can be established and quantified in the annealed as well as the degradedstates. An example is presented for such a quantitative correlation for a Schottky barrier cell structure in the annealed and degraded states.

AB - The issue of the lack of reliable correlation between the characteristics of high performance cells and their intrinsic material properties is addressed in this document. A systematic approach to the question of separating the effects of the bulk from those of the interface is described which is based on the selfconsistent analysis on a variety of both materials and solar cell properties in theannealed and degraded state. The results presented are on characteristics which include not only light I-V but also dark I-V and QE of p-i-n solar cells with different thicknesses as well as on n-i-metal Schottky barrier cell structures. These results are discussed in terms of how the contributions of the bulk i-layers can be established and quantified in the annealed as well as the degradedstates. An example is presented for such a quantitative correlation for a Schottky barrier cell structure in the annealed and degraded states.

M3 - Paper

SP - 1125

EP - 1128

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Light-Induced Degradation in Different p-i-n and n-i Schottky Barrier Solar Cell Structures

Abstract

Conference

Bibliographical note

NLR Publication Number

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Cite this