Laterally Modulated Composition Profiles in AlAs/InAs Short-Period Superlattices

S. P. Ahrenkiel; A. G. Norman; M. M. Al-Jassim; A. Mascarenhas; J. Mirecki-Millunchick; R. D. Twesten; S. R. Lee; D. M. Follstaedt; E. D. Jones

doi:10.1063/1.368921

Laterally Modulated Composition Profiles in AlAs/InAs Short-Period Superlattices

S. P. Ahrenkiel
, A. G. Norman
, M. M. Al-Jassim
, A. Mascarenhas
, J. Mirecki-Millunchick
, R. D. Twesten
, S. R. Lee
, D. M. Follstaedt
, E. D. Jones

Materials Science

National Renewable Energy Laboratory
Sandia Laboratories Albuquerque
University of Michigan, Ann Arbor
University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

36 Scopus Citations

Abstract

Laterally modulated composition profiles in AlAs/InAs short-period superlattices grown by molecular-beam epitaxy under tensile strain on (001) InP are examined by transmission electron microscopy (TEM) and x-ray diffraction K mapping. Weak, one-dimensional modulation with a wavelength of λ_m=110 Å is observed for a period of 1 ML. At 2 ML, the composition profile is irregular, while a two-dimensional network of wire and dot structures with λ_m=130 Å occurs at 3 ML. At a high growth rate, 4-ML samples exhibit smooth modulated profiles with λ_m=220 Å. When the growth rate is reduced with beam interrupts, sharp profiles develop that show strong alignment in the substrate plane with λ_m=270 Å. TEM dark-field image contrast of the modulated profiles is simulated using dynamical diffraction theory to reproduce features observed in experiment.

Original language	American English
Pages (from-to)	6088-6094
Number of pages	7
Journal	Journal of Applied Physics
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.368921 https://doi.org/10.1063/1.368921
State	Published - 1998

NLR Publication Number

NREL/JA-520-24623

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@article{0d8f8f83846e46f48d8cb1772610d605,

title = "Laterally Modulated Composition Profiles in AlAs/InAs Short-Period Superlattices",

abstract = "Laterally modulated composition profiles in AlAs/InAs short-period superlattices grown by molecular-beam epitaxy under tensile strain on (001) InP are examined by transmission electron microscopy (TEM) and x-ray diffraction K mapping. Weak, one-dimensional modulation with a wavelength of λm=110 {\AA} is observed for a period of 1 ML. At 2 ML, the composition profile is irregular, while a two-dimensional network of wire and dot structures with λm=130 {\AA} occurs at 3 ML. At a high growth rate, 4-ML samples exhibit smooth modulated profiles with λm=220 {\AA}. When the growth rate is reduced with beam interrupts, sharp profiles develop that show strong alignment in the substrate plane with λm=270 {\AA}. TEM dark-field image contrast of the modulated profiles is simulated using dynamical diffraction theory to reproduce features observed in experiment.",

author = "Ahrenkiel, \{S. P.\} and Norman, \{A. G.\} and Al-Jassim, \{M. M.\} and A. Mascarenhas and J. Mirecki-Millunchick and Twesten, \{R. D.\} and Lee, \{S. R.\} and Follstaedt, \{D. M.\} and Jones, \{E. D.\}",

year = "1998",

doi = "10.1063/1.368921",

language = "American English",

volume = "84",

pages = "6088--6094",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Laterally Modulated Composition Profiles in AlAs/InAs Short-Period Superlattices

AU - Ahrenkiel, S. P.

AU - Norman, A. G.

AU - Al-Jassim, M. M.

AU - Mascarenhas, A.

AU - Mirecki-Millunchick, J.

AU - Twesten, R. D.

AU - Lee, S. R.

AU - Follstaedt, D. M.

AU - Jones, E. D.

PY - 1998

Y1 - 1998

N2 - Laterally modulated composition profiles in AlAs/InAs short-period superlattices grown by molecular-beam epitaxy under tensile strain on (001) InP are examined by transmission electron microscopy (TEM) and x-ray diffraction K mapping. Weak, one-dimensional modulation with a wavelength of λm=110 Å is observed for a period of 1 ML. At 2 ML, the composition profile is irregular, while a two-dimensional network of wire and dot structures with λm=130 Å occurs at 3 ML. At a high growth rate, 4-ML samples exhibit smooth modulated profiles with λm=220 Å. When the growth rate is reduced with beam interrupts, sharp profiles develop that show strong alignment in the substrate plane with λm=270 Å. TEM dark-field image contrast of the modulated profiles is simulated using dynamical diffraction theory to reproduce features observed in experiment.

AB - Laterally modulated composition profiles in AlAs/InAs short-period superlattices grown by molecular-beam epitaxy under tensile strain on (001) InP are examined by transmission electron microscopy (TEM) and x-ray diffraction K mapping. Weak, one-dimensional modulation with a wavelength of λm=110 Å is observed for a period of 1 ML. At 2 ML, the composition profile is irregular, while a two-dimensional network of wire and dot structures with λm=130 Å occurs at 3 ML. At a high growth rate, 4-ML samples exhibit smooth modulated profiles with λm=220 Å. When the growth rate is reduced with beam interrupts, sharp profiles develop that show strong alignment in the substrate plane with λm=270 Å. TEM dark-field image contrast of the modulated profiles is simulated using dynamical diffraction theory to reproduce features observed in experiment.

UR - https://www.scopus.com/pages/publications/0005079132

U2 - 10.1063/1.368921

DO - 10.1063/1.368921

M3 - Article

AN - SCOPUS:0005079132

SN - 0021-8979

VL - 84

SP - 6088

EP - 6094

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Laterally Modulated Composition Profiles in AlAs/InAs Short-Period Superlattices

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