Issues in Emissivity of Silicon

Issues in Emissivity of Silicon

NREL

Research output: Contribution to conference › Paper

Abstract

The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20..mu..m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead toincreased emissivities.

Original language	American English
Pages	95-102
Number of pages	8
State	Published - 1998
Event	Rapid Thermal and Integrated Processing VII: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 1998 → 15 Apr 1998

Conference

Conference	Rapid Thermal and Integrated Processing VII: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/98 → 15/04/98

NLR Publication Number

NREL/CP-520-26135

Cite this

@conference{3e1c0f04837a456abbe37f17e3df7b1a,

title = "Issues in Emissivity of Silicon",

abstract = "The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20..mu..m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead toincreased emissivities.",

author = "NREL",

year = "1998",

language = "American English",

pages = "95--102",

note = "Rapid Thermal and Integrated Processing VII: Materials Research Society Symposium ; Conference date: 13-04-1998 Through 15-04-1998",

}

TY - CONF

T1 - Issues in Emissivity of Silicon

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20..mu..m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead toincreased emissivities.

AB - The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20..mu..m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead toincreased emissivities.

M3 - Paper

SP - 95

EP - 102

T2 - Rapid Thermal and Integrated Processing VII: Materials Research Society Symposium

Y2 - 13 April 1998 through 15 April 1998

ER -

Issues in Emissivity of Silicon

Abstract

Conference

NLR Publication Number

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Cite this