Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Robert Reedy Jr.

doi:10.1109/JPHOTOV.2013.2285621

Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste

Robert Reedy Jr.

Materials Science

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	134-141
Number of pages	8
Journal	IEEE Journal of Photovoltaics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2285621
State	Published - 2014

NLR Publication Number

NREL/JA-5200-61462

Access to Document

10.1109/JPHOTOV.2013.2285621

Cite this

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title = "Investigation of the Mechanism Resulting in low Resistance Ag Thick-Film Contact to Si Solar Cells in the Context of Emitter Doping Density and Contact Firing for Current-Generation Ag Paste",

author = "\{Reedy Jr.\}, Robert",

year = "2014",

doi = "10.1109/JPHOTOV.2013.2285621",

language = "American English",

volume = "4",

pages = "134--141",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "1",

}

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AU - Reedy Jr., Robert

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Y1 - 2014

U2 - 10.1109/JPHOTOV.2013.2285621

DO - 10.1109/JPHOTOV.2013.2285621

M3 - Article

SN - 2156-3381

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EP - 141

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 1

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