Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley

W. B. Wang; Kai Shum; R. R. Alfano; D. Szmyd; A. J. Nozik

doi:10.1088/0268-1242/7/3B/042

Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley

W. B. Wang
, Kai Shum
, R. R. Alfano
, D. Szmyd
, A. J. Nozik

City University of New York
Unknown

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

The time evolution of the electron population in the bottom of the X ₆ valley in Al_0.6Ga_0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L₆ to X₆ intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L₆ to X₆ intervalley scattering for the relaxation process of hot carriers was revealed.

Original language	American English
Article number	042
Pages (from-to)	B173-B175
Journal	Semiconductor Science and Technology
Volume	7
Issue number	3 B
DOIs	https://doi.org/10.1088/0268-1242/7/3B/042 https://doi.org/10.1088/0268-1242/7/3B/042
State	Published - 1992
Externally published	Yes

NLR Publication Number

ACNR/JA-16500

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Wang, W. B., Shum, K., Alfano, R. R., Szmyd, D., & Nozik, A. J. (1992). Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley. Semiconductor Science and Technology, 7(3 B), B173-B175. Article 042. https://doi.org/10.1088/0268-1242/7/3B/042, https://doi.org/10.1088/0268-1242/7/3B/042

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title = "Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley",

abstract = "The time evolution of the electron population in the bottom of the X 6 valley in Al0.6Ga0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L6 to X6 intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L6 to X6 intervalley scattering for the relaxation process of hot carriers was revealed.",

author = "Wang, \{W. B.\} and Kai Shum and Alfano, \{R. R.\} and D. Szmyd and Nozik, \{A. J.\}",

year = "1992",

doi = "10.1088/0268-1242/7/3B/042",

language = "American English",

volume = "7",

pages = "B173--B175",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

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T1 - Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley

AU - Wang, W. B.

AU - Shum, Kai

AU - Alfano, R. R.

AU - Szmyd, D.

AU - Nozik, A. J.

PY - 1992

Y1 - 1992

N2 - The time evolution of the electron population in the bottom of the X 6 valley in Al0.6Ga0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L6 to X6 intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L6 to X6 intervalley scattering for the relaxation process of hot carriers was revealed.

AB - The time evolution of the electron population in the bottom of the X 6 valley in Al0.6Ga0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L6 to X6 intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L6 to X6 intervalley scattering for the relaxation process of hot carriers was revealed.

UR - https://www.scopus.com/pages/publications/0026839504

U2 - 10.1088/0268-1242/7/3B/042

DO - 10.1088/0268-1242/7/3B/042

M3 - Article

AN - SCOPUS:0026839504

SN - 0268-1242

VL - 7

SP - B173-B175

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3 B

M1 - 042

ER -

Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley

Abstract

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