Abstract
This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2008 |
| Event | 33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008 |
Conference
| Conference | 33rd IEEE Photovoltaic Specialists Conference |
|---|---|
| City | San Diego, California |
| Period | 11/05/08 → 16/05/08 |
NLR Publication Number
- NREL/CP-520-42573
Keywords
- CIGS
- device performance
- metal-organic chemical vapor deposition (MOCVD)
- PV
- RF magnetron sputtering
- solar cells
- x-ray photoelectron spectroscopy (XPS)
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