Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer

M. S. White; D. C. Olson; S. E. Shaheen; N. Kopidakis; D. S. Ginley

doi:10.1063/1.2359579

Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer

M. S. White
, D. C. Olson
, S. E. Shaheen
, N. Kopidakis
, D. S. Ginley

University of Colorado Boulder
Sandia Laboratories Albuquerque
National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

812 Scopus Citations

Abstract

Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

Original language	American English
Article number	143517
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2359579 https://doi.org/10.1063/1.2359579
State	Published - 2006

NLR Publication Number

NREL/JA-520-39645

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title = "Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer",

abstract = "Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58\%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.",

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volume = "89",

journal = "Applied Physics Letters",

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AU - Kopidakis, N.

AU - Ginley, D. S.

PY - 2006

Y1 - 2006

N2 - Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

AB - Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

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DO - 10.1063/1.2359579

M3 - Article

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143517

ER -

Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer

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