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Interlayer Exciton Polarons in Mesoscopic V2O5 for Broadband Optoelectronic Synapses: Article No. e10479

  • Lawrence Berkeley National Laboratory
  • Texas A&M University
  • King's College London
  • National Research Council

Research output: Contribution to journalArticlepeer-review

Abstract

Persistent photoconductivity and optoelectronic synaptic behavior are demonstrated in solution-processed mesoscopic ..alpha..-phase vanadium pentoxide (V2O5) thin films. First-principles simulations coupled with the two-site Holstein polaron hopping model show that vacancies at the terminal oxygen position lead to long recombination times because photoexcited electrons and holes reside on different layers separated by the van der Waals gap, forming a weakly coupled interlayer exciton polaron. Mid-gap polaronic states also significantly broaden the photoresponse of the films to span across visible and infrared wavelengths. By controlling the amplitude/intensity, duration, and/or number of optical pulses, tunable optoelectronic memory functions, such as short-term and long-term plasticity, are experimentally established in V2O5-based optoelectronic synapses. Device fabrication was extended to mechanically flexible ultrathin glass substrates. Flexible optoelectronic synapses maintained high performance after 150 bending cycles.
Original languageAmerican English
Number of pages13
JournalAdvanced Functional Materials
Volume36
Issue number24
DOIs
StatePublished - 2026

NLR Publication Number

  • NLR/JA-5K00-94589

Keywords

  • mesoporous
  • non-volatile memory
  • optical memory
  • optoelectronic synapse
  • oxygen vacancy
  • persistent photoconductivity
  • Questaal
  • vanadyl oxygen

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