Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Lorelle Mansfield; Ina Martin; Tricia Oyster; Rachael Matthews; Emily Pentzer; Roger French; Timothy Peshek

doi:10.1109/PVSC.2017.8366313

Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Lorelle Mansfield
, Ina Martin
, Tricia Oyster
, Rachael Matthews
, Emily Pentzer
, Roger French
, Timothy Peshek

Materials Science

Case Western Reserve University

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se₂ device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

Original language	American English
Pages	377-380
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2017.8366313
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NLR Publication Number

NREL/CP-5K00-67954

Keywords

Aluminum-doped zinc oxide
CIGS
Degradation
Photovoltaic cells
Transparent conductive oxide

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10.1109/PVSC.2017.8366313

Cite this

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title = "Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices",

abstract = "Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.",

keywords = "Aluminum-doped zinc oxide, CIGS, Degradation, Photovoltaic cells, Transparent conductive oxide",

author = "Lorelle Mansfield and Ina Martin and Tricia Oyster and Rachael Matthews and Emily Pentzer and Roger French and Timothy Peshek",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366313",

language = "American English",

pages = "377--380",

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TY - CONF

T1 - Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

AU - Mansfield, Lorelle

AU - Martin, Ina

AU - Oyster, Tricia

AU - Matthews, Rachael

AU - Pentzer, Emily

AU - French, Roger

AU - Peshek, Timothy

PY - 2017

Y1 - 2017

N2 - Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

AB - Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

KW - Aluminum-doped zinc oxide

KW - CIGS

KW - Degradation

KW - Photovoltaic cells

KW - Transparent conductive oxide

UR - https://www.scopus.com/pages/publications/85048512979

U2 - 10.1109/PVSC.2017.8366313

DO - 10.1109/PVSC.2017.8366313

M3 - Paper

AN - SCOPUS:85048512979

SP - 377

EP - 380

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

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