Interfacial Atomic Structure and Band Offsets at Semiconductor Heterojunctions

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1744-1753
Number of pages	10
Journal	Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena
Volume	10
Issue number	4
DOIs	https://doi.org/10.1116/1.586234
State	Published - 1992

NLR Publication Number

@article{67f76b6cb44449e99cbffc1e8f89a45f,

title = "Interfacial Atomic Structure and Band Offsets at Semiconductor Heterojunctions",

author = "NREL",

year = "1992",

doi = "10.1116/1.586234",

language = "American English",

volume = "10",

pages = "1744--1753",

journal = "Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

number = "4",

}

TY - JOUR

T1 - Interfacial Atomic Structure and Band Offsets at Semiconductor Heterojunctions

AU - NREL, null

PY - 1992

Y1 - 1992

U2 - 10.1116/1.586234

DO - 10.1116/1.586234

M3 - Article

SN - 0734-211X

VL - 10

SP - 1744

EP - 1753

JO - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

IS - 4

ER -