Interface Engineering for 25% CdTe Solar Cells

Tursun Ablekim; Eric Colegrove; Wyatt K. Metzger

doi:10.1021/acsaem.8b01173

Interface Engineering for 25% CdTe Solar Cells

Tursun Ablekim
, Eric Colegrove
, Wyatt K. Metzger

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

90 Scopus Citations

Abstract

Buffer layers, such as CdS and Mg_xZn_1-xO (MZO), are critical for CdTe and other thin film polycrystalline solar cells. A ternary compound, such as MZO, allows for interface engineering by adjusting composition, bandgap, and doping to manipulate barriers and recombination to enhance thin film efficiencies toward 25%. Here, theoretical studies demonstrate the enormous impact of front interface offset and emitter doping have on device performance. The results reveal it is possible to achieve 25% device efficiency with open-circuit voltage >1 V, even for 10⁵ cm/s recombination velocity, provided the interface offsets and doping are properly engineered.

Original language	American English
Pages (from-to)	5135-5139
Number of pages	5
Journal	ACS Applied Energy Materials
Volume	1
Issue number	10
DOIs	https://doi.org/10.1021/acsaem.8b01173 https://doi.org/10.1021/acsaem.8b01173
State	Published - 2018

Bibliographical note

Publisher Copyright:
Copyright © 2018 American Chemical Society.

NLR Publication Number

NREL/JA-5K00-72328

Keywords

cadmium telluride
CdTe
MgZnO
recombination
thin film solar cells

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@article{27d5a18b6a264447b9c0bc96e6ecbab6,

title = "Interface Engineering for 25\% CdTe Solar Cells",

abstract = "Buffer layers, such as CdS and MgxZn1-xO (MZO), are critical for CdTe and other thin film polycrystalline solar cells. A ternary compound, such as MZO, allows for interface engineering by adjusting composition, bandgap, and doping to manipulate barriers and recombination to enhance thin film efficiencies toward 25\%. Here, theoretical studies demonstrate the enormous impact of front interface offset and emitter doping have on device performance. The results reveal it is possible to achieve 25\% device efficiency with open-circuit voltage >1 V, even for 105 cm/s recombination velocity, provided the interface offsets and doping are properly engineered.",

keywords = "cadmium telluride, CdTe, MgZnO, recombination, thin film solar cells",

author = "Tursun Ablekim and Eric Colegrove and Metzger, \{Wyatt K.\}",

note = "Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

year = "2018",

doi = "10.1021/acsaem.8b01173",

language = "American English",

volume = "1",

pages = "5135--5139",

journal = "ACS Applied Energy Materials",

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TY - JOUR

T1 - Interface Engineering for 25% CdTe Solar Cells

AU - Ablekim, Tursun

AU - Colegrove, Eric

AU - Metzger, Wyatt K.

PY - 2018

Y1 - 2018

N2 - Buffer layers, such as CdS and MgxZn1-xO (MZO), are critical for CdTe and other thin film polycrystalline solar cells. A ternary compound, such as MZO, allows for interface engineering by adjusting composition, bandgap, and doping to manipulate barriers and recombination to enhance thin film efficiencies toward 25%. Here, theoretical studies demonstrate the enormous impact of front interface offset and emitter doping have on device performance. The results reveal it is possible to achieve 25% device efficiency with open-circuit voltage >1 V, even for 105 cm/s recombination velocity, provided the interface offsets and doping are properly engineered.

AB - Buffer layers, such as CdS and MgxZn1-xO (MZO), are critical for CdTe and other thin film polycrystalline solar cells. A ternary compound, such as MZO, allows for interface engineering by adjusting composition, bandgap, and doping to manipulate barriers and recombination to enhance thin film efficiencies toward 25%. Here, theoretical studies demonstrate the enormous impact of front interface offset and emitter doping have on device performance. The results reveal it is possible to achieve 25% device efficiency with open-circuit voltage >1 V, even for 105 cm/s recombination velocity, provided the interface offsets and doping are properly engineered.

KW - cadmium telluride

KW - CdTe

KW - MgZnO

KW - recombination

KW - thin film solar cells

UR - https://www.scopus.com/pages/publications/85064752659

U2 - 10.1021/acsaem.8b01173

DO - 10.1021/acsaem.8b01173

M3 - Article

AN - SCOPUS:85064752659

SN - 2574-0962

VL - 1

SP - 5135

EP - 5139

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 10

ER -

Interface Engineering for 25% CdTe Solar Cells

Abstract

Bibliographical note

NLR Publication Number

Keywords

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