Influence of the Wavelength of Incident Light on Shunt Conductance and Fill Factor in Amorphous Silicon Solar Cells

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	551-558
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	ED-31
Issue number	5
DOIs	https://doi.org/10.1109/T-ED.1984.21568
State	Published - 1984

Work performed by Solar Energy Research Institute, Golden, Colorado and North Carolina State University, Raleigh, North Carolina

NLR Publication Number

@article{89184ca85e494017bd102e18ac086bc5,

title = "Influence of the Wavelength of Incident Light on Shunt Conductance and Fill Factor in Amorphous Silicon Solar Cells",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado and North Carolina State University, Raleigh, North Carolina",

year = "1984",

doi = "10.1109/T-ED.1984.21568",

language = "American English",

volume = "ED-31",

pages = "551--558",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Influence of the Wavelength of Incident Light on Shunt Conductance and Fill Factor in Amorphous Silicon Solar Cells

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado and North Carolina State University, Raleigh, North Carolina

PY - 1984

Y1 - 1984

U2 - 10.1109/T-ED.1984.21568

DO - 10.1109/T-ED.1984.21568

M3 - Article

SN - 0018-9383

VL - ED-31

SP - 551

EP - 558

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -