In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry

D. H. Levi; B. P. Nelson; J. D. Perkins; H. R. Moutinho

doi:10.1116/1.1564037

In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry

D. H. Levi
, B. P. Nelson
, J. D. Perkins
, H. R. Moutinho

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

RTSE measurements show that the transition from α-Si:H growth to μc-Si:H growth in HWCD deposition of Si:H is relatively abrupt as a function of hydrogen dilution. The degree of crystallinity depends sensitively on the film thickness.

Original language	American English
Pages (from-to)	1545-1549
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1564037 https://doi.org/10.1116/1.1564037
State	Published - 2003

NLR Publication Number

NREL/JA-520-34994

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Levi, D. H., Nelson, B. P., Perkins, J. D., & Moutinho, H. R. (2003). In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(4), 1545-1549. https://doi.org/10.1116/1.1564037, https://doi.org/10.1116/1.1564037

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title = "In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry",

abstract = "RTSE measurements show that the transition from α-Si:H growth to μc-Si:H growth in HWCD deposition of Si:H is relatively abrupt as a function of hydrogen dilution. The degree of crystallinity depends sensitively on the film thickness.",

author = "Levi, \{D. H.\} and Nelson, \{B. P.\} and Perkins, \{J. D.\} and Moutinho, \{H. R.\}",

year = "2003",

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Levi, DH, Nelson, BP, Perkins, JD & Moutinho, HR 2003, 'In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 21, no. 4, pp. 1545-1549. https://doi.org/10.1116/1.1564037, https://doi.org/10.1116/1.1564037

In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry. / Levi, D. H.; Nelson, B. P.; Perkins, J. D. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 4, 2003, p. 1545-1549.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry

AU - Levi, D. H.

AU - Nelson, B. P.

AU - Perkins, J. D.

AU - Moutinho, H. R.

PY - 2003

Y1 - 2003

N2 - RTSE measurements show that the transition from α-Si:H growth to μc-Si:H growth in HWCD deposition of Si:H is relatively abrupt as a function of hydrogen dilution. The degree of crystallinity depends sensitively on the film thickness.

AB - RTSE measurements show that the transition from α-Si:H growth to μc-Si:H growth in HWCD deposition of Si:H is relatively abrupt as a function of hydrogen dilution. The degree of crystallinity depends sensitively on the film thickness.

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M3 - Article

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SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

In situ Studies of the Amorphous to Microcrystalline Transition of Hot-Wire Chemical Vapor Deposition Si:H Films Using Real-Time Spectroscopic Ellipsometry

Abstract

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