Impurity and Defect Characterization in Silicon: Final Technical Report, 1 October 1991 - March 1992

Impurity and Defect Characterization in Silicon: Final Technical Report, 1 October 1991 - March 1992

NREL

Research output: NLR › Subcontract Report

Abstract

The main objective of this research was to carry out an in-depth impurity analysis of polycrystalline samples, using techniques such as DLTS, FTIR, and light and dark I-V and correlate their effects on the photovoltaic parameters. The second object of this research was to understand the role of defect and gettering in polycrystalline silicon and develop processes for fabricating high efficiencypolycrystalline cells using conventional process sequence and provide silicon solar cells to NREL for optically processed metallization.

Original language	American English
Publisher	National Laboratory of the Rockies (NLR)
Number of pages	54
State	Published - 1992

Bibliographical note

Work performed by the Georgia Institute of Technology, Atlanta, Georgia

NLR Publication Number

NREL/SR-451-21188

Keywords

defects
photovoltaics (PV)
polycrystalline silicon
solar energy

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title = "Impurity and Defect Characterization in Silicon: Final Technical Report, 1 October 1991 - March 1992",

abstract = "The main objective of this research was to carry out an in-depth impurity analysis of polycrystalline samples, using techniques such as DLTS, FTIR, and light and dark I-V and correlate their effects on the photovoltaic parameters. The second object of this research was to understand the role of defect and gettering in polycrystalline silicon and develop processes for fabricating high efficiencypolycrystalline cells using conventional process sequence and provide silicon solar cells to NREL for optically processed metallization.",

keywords = "defects, photovoltaics (PV), polycrystalline silicon, solar energy",

author = "NREL",

note = "Work performed by the Georgia Institute of Technology, Atlanta, Georgia",

year = "1992",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

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T1 - Impurity and Defect Characterization in Silicon: Final Technical Report, 1 October 1991 - March 1992

AU - NREL, null

N1 - Work performed by the Georgia Institute of Technology, Atlanta, Georgia

PY - 1992

Y1 - 1992

N2 - The main objective of this research was to carry out an in-depth impurity analysis of polycrystalline samples, using techniques such as DLTS, FTIR, and light and dark I-V and correlate their effects on the photovoltaic parameters. The second object of this research was to understand the role of defect and gettering in polycrystalline silicon and develop processes for fabricating high efficiencypolycrystalline cells using conventional process sequence and provide silicon solar cells to NREL for optically processed metallization.

AB - The main objective of this research was to carry out an in-depth impurity analysis of polycrystalline samples, using techniques such as DLTS, FTIR, and light and dark I-V and correlate their effects on the photovoltaic parameters. The second object of this research was to understand the role of defect and gettering in polycrystalline silicon and develop processes for fabricating high efficiencypolycrystalline cells using conventional process sequence and provide silicon solar cells to NREL for optically processed metallization.

KW - defects

KW - photovoltaics (PV)

KW - polycrystalline silicon

KW - solar energy

M3 - Subcontract Report

PB - National Laboratory of the Rockies (NLR)

ER -

Impurity and Defect Characterization in Silicon: Final Technical Report, 1 October 1991 - March 1992

Abstract

Bibliographical note

NLR Publication Number

Keywords

Access to Document

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Cite this