Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

William Nemeth; Vincenzo Lasalvia; Matthew R. Page; Emily L. Warren; Arrelaine Dameron; Andrew G. Norman; Benjamin G. Lee; David L. Young; Paul Stradins

doi:10.1109/PVSC.2015.7356062

Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

William Nemeth
, Vincenzo Lasalvia
, Matthew R. Page
, Emily L. Warren
, Arrelaine Dameron
, Andrew G. Norman
, Benjamin G. Lee
, David L. Young
, Paul Stradins

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

23 Scopus Citations

Abstract

We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 < 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

Original language	American English
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2015.7356062 https://doi.org/10.1109/PVSC.2015.7356062
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NLR Publication Number

NREL/CP-5J00-64427

Keywords

oxygen precipitates
passivated contacts
Tabula Rasa

Access to Document

Cite this

Nemeth, W., Lasalvia, V., Page, M. R., Warren, E. L., Dameron, A., Norman, A. G., Lee, B. G., Young, D. L., & Stradins, P. (2015). Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells. Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States. https://doi.org/10.1109/PVSC.2015.7356062, https://doi.org/10.1109/PVSC.2015.7356062

@conference{c62634d3a7bc4386bbb53103964de5b4,

title = "Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells",

abstract = "We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 < 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.",

keywords = "oxygen precipitates, passivated contacts, Tabula Rasa",

author = "William Nemeth and Vincenzo Lasalvia and Page, \{Matthew R.\} and Warren, \{Emily L.\} and Arrelaine Dameron and Norman, \{Andrew G.\} and Lee, \{Benjamin G.\} and Young, \{David L.\} and Paul Stradins",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356062",

language = "American English",

}

Nemeth, W, Lasalvia, V, Page, MR , Warren, EL, Dameron, A, Norman, AG, Lee, BG, Young, DL & Stradins, P 2015, 'Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells', Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15 - 19/06/15. https://doi.org/10.1109/PVSC.2015.7356062, https://doi.org/10.1109/PVSC.2015.7356062

TY - CONF

T1 - Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

AU - Nemeth, William

AU - Lasalvia, Vincenzo

AU - Page, Matthew R.

AU - Warren, Emily L.

AU - Dameron, Arrelaine

AU - Norman, Andrew G.

AU - Lee, Benjamin G.

AU - Young, David L.

AU - Stradins, Paul

PY - 2015/12/14

Y1 - 2015/12/14

N2 - We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 < 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

AB - We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 < 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

KW - oxygen precipitates

KW - passivated contacts

KW - Tabula Rasa

UR - https://www.scopus.com/pages/publications/84961613296

U2 - 10.1109/PVSC.2015.7356062

DO - 10.1109/PVSC.2015.7356062

M3 - Paper

AN - SCOPUS:84961613296

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this