Skip to main navigation Skip to search Skip to main content

Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)188-193
    Number of pages6
    JournalJournal of Crystal Growth
    Volume77
    Issue number1-3
    DOIs
    StatePublished - 1986

    Bibliographical note

    Work performed by Department of Electrical Engineering and Materials Science and Center for Photonic Technology, University of Southern California, Los Angeles, California

    NLR Publication Number

    • ACNR/JA-9664

    Cite this