Abstract
Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.
| Original language | American English |
|---|---|
| Patent number | 12,132,129 B2 |
| Filing date | 29/10/24 |
| State | Published - 2024 |
NLR Publication Number
- NREL/PT-5K00-91840
Keywords
- cracked film lithography
- cracked film lithography grids
- optoelectronic device
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