High Bandgap III-V Alloys for High Efficiency Optoelectronics

Kirstin Alberi; Mark Wanlass; Angelo Mascarenhas

High Bandgap III-V Alloys for High Efficiency Optoelectronics

Kirstin Alberi (Inventor)
, Mark Wanlass (Inventor)
, Angelo Mascarenhas (Inventor)

National Renewable Energy Laboratory

Research output: Patent

Abstract

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Original language	American English
Patent number	9,543,468
Filing date	10/01/17
State	Published - 2017

NLR Publication Number

NREL/PT-5K00-70248

Keywords

GaAs
layer
optoelectronics
substrate

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Cite this

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title = "High Bandgap III-V Alloys for High Efficiency Optoelectronics",

abstract = "High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.",

keywords = "GaAs, layer, optoelectronics, substrate",

author = "Kirstin Alberi and Mark Wanlass and Angelo Mascarenhas",

year = "2017",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Patent",

note = "9,543,468",

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TY - PAT

T1 - High Bandgap III-V Alloys for High Efficiency Optoelectronics

AU - Alberi, Kirstin

AU - Wanlass, Mark

AU - Mascarenhas, Angelo

PY - 2017

Y1 - 2017

N2 - High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

AB - High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

KW - GaAs

KW - layer

KW - optoelectronics

KW - substrate

M3 - Patent

M1 - 9,543,468

Y2 - 2017/01/10

PB - National Laboratory of the Rockies (NLR)

ER -

High Bandgap III-V Alloys for High Efficiency Optoelectronics

Abstract

NLR Publication Number

Keywords

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