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H-Diffusion Mechanism(s) in PECVD Nitride Passivation of Si Solar Cells: Preprint

    Research output: Contribution to conference › Paper

    Abstract

    Presented at the 2001 NCPV Program Review Meeting: Modeled diffusion of H in 2-step Si3N4 passivation process invoking concept of storage of H. H stored during nitridation is redistributed during subsequent anneal.
    Original languageAmerican English
    Number of pages4
    StatePublished - 2001
    EventNCPV Program Review Meeting - Lakewood, Colorado
    Duration: 14 Oct 2001 → 17 Oct 2001

    Conference

    ConferenceNCPV Program Review Meeting
    CityLakewood, Colorado
    Period14/10/01 → 17/10/01

    NLR Publication Number

    • NREL/CP-520-31002

    Keywords

    • H diffusion
    • modeling
    • nitridation
    • passivation
    • PV
    • RTP
    • Si3N4

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