H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

NREL

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Abstract

We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma,ion implantation, and PECVD-nitridation processes.

Original language	American English
Number of pages	8
State	Published - 2002
Event	29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002

Conference

Conference	29th IEEE PV Specialists Conference
City	New Orleans, Louisiana
Period	20/05/02 → 24/05/02

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NLR Publication Number

NREL/CP-520-31396

Keywords

defects
H diffusion
impurities
nitridation
optimum passivation
PV
solar cell processing
traps

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@conference{fd739a0a5ca84ab8bcf0dd16df7e89c7,

title = "H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint",

abstract = "We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma,ion implantation, and PECVD-nitridation processes.",

keywords = "defects, H diffusion, impurities, nitridation, optimum passivation, PV, solar cell processing, traps",

author = "NREL",

note = "Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana; 29th IEEE PV Specialists Conference ; Conference date: 20-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

}

TY - CONF

T1 - H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

AU - NREL, null

N1 - Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

PY - 2002

Y1 - 2002

N2 - We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma,ion implantation, and PECVD-nitridation processes.

AB - We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and charge-state conversion. The role of bulk and process-induced traps is considered to explain observations from plasma,ion implantation, and PECVD-nitridation processes.

KW - defects

KW - H diffusion

KW - impurities

KW - nitridation

KW - optimum passivation

KW - PV

KW - solar cell processing

KW - traps

M3 - Paper

T2 - 29th IEEE PV Specialists Conference

Y2 - 20 May 2002 through 24 May 2002

ER -

H Diffusion for Impurity and Defect Passivation: A Physical Model for Solar Cell Processing; Preprint

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

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