Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	261-271
Number of pages	11
State	Published - 1999
Event	Epitaxial Growth: Principles and Applications: Materials Research Society Spring Conference - San Francisco, California Duration: 6 Apr 1999 → 10 Apr 1999

Conference

Conference	Epitaxial Growth: Principles and Applications: Materials Research Society Spring Conference
City	San Francisco, California
Period	6/04/99 → 10/04/99

NLR Publication Number

NREL/CP-520-27863

Cite this

@conference{3e8f6d2cb9054188afa9492d5aa1b03f,

title = "Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition",

author = "NREL",

year = "1999",

language = "American English",

pages = "261--271",

note = "Epitaxial Growth: Principles and Applications: Materials Research Society Spring Conference ; Conference date: 06-04-1999 Through 10-04-1999",

}