Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

T. F. Ciszek; T. H. Wang; R. W. Burrows; X. Wu; J. Alleman; T. Bekkedahl; Y. S. Tsuo

doi:10.1109/PVSC.1993.347071

Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

T. F. Ciszek
, T. H. Wang
, R. W. Burrows
, X. Wu
, J. Alleman
, T. Bekkedahl
, Y. S. Tsuo

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

11 Scopus Citations

Abstract

To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10^-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min^-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.

Original language	American English
Pages	101-105
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.1993.347071
State	Published - 1993
Event	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA Duration: 10 May 1993 → 14 May 1993

Conference

Conference	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
City	Louisville, KY, USA
Period	10/05/93 → 14/05/93

NLR Publication Number

NREL/CP-451-5550

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10.1109/PVSC.1993.347071

Cite this

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title = "Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon",

abstract = "To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 {\texttimes} 10-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.",

author = "Ciszek, \{T. F.\} and Wang, \{T. H.\} and Burrows, \{R. W.\} and X. Wu and J. Alleman and T. Bekkedahl and Tsuo, \{Y. S.\}",

year = "1993",

doi = "10.1109/PVSC.1993.347071",

language = "American English",

pages = "101--105",

note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",

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TY - CONF

T1 - Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

AU - Ciszek, T. F.

AU - Wang, T. H.

AU - Burrows, R. W.

AU - Wu, X.

AU - Alleman, J.

AU - Bekkedahl, T.

AU - Tsuo, Y. S.

PY - 1993

Y1 - 1993

N2 - To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.

AB - To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.

UR - https://www.scopus.com/pages/publications/0027814335

U2 - 10.1109/PVSC.1993.347071

DO - 10.1109/PVSC.1993.347071

M3 - Paper

AN - SCOPUS:0027814335

SP - 101

EP - 105

T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference

Y2 - 10 May 1993 through 14 May 1993

ER -

Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

Abstract

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