GaP and GaAs Films Grown by Vacuum Chemical Epitaxy Using TEGa and TMGa Sources

Research output: Contribution to journal › Article

Work performed by Chevron Research Company, Richmond, California

NLR Publication Number

@article{6eb172de5d114cdeb338d426097685b0,

title = "GaP and GaAs Films Grown by Vacuum Chemical Epitaxy Using TEGa and TMGa Sources",

author = "NREL",

note = "Work performed by Chevron Research Company, Richmond, California",

year = "1986",

doi = "10.1016/0022-0248(86)90328-3",

language = "American English",

volume = "77",

pages = "386--391",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - GaP and GaAs Films Grown by Vacuum Chemical Epitaxy Using TEGa and TMGa Sources

AU - NREL, null

N1 - Work performed by Chevron Research Company, Richmond, California

PY - 1986

Y1 - 1986

U2 - 10.1016/0022-0248(86)90328-3

DO - 10.1016/0022-0248(86)90328-3

M3 - Article

SN - 0022-0248

VL - 77

SP - 386

EP - 391

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-3

ER -