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Formation of CdxHg1-xTe Layers on CdTe after NP-Etching and HgTe-Graphite Pasting

  • Yanfa Yan
  • , K. M. Jones
  • , X. Wu
  • , M. M. Al-Jassim
  • National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We report on our investigation of the microstructure and chemical composition at the CdTe/Te-rich interfaces generated by NP-etching polycrystalline and single-crystalline CdTe films and followed with HgTe-graphite pasting and thermal annealing. We find that after this process, a thin layer of CdxHg1-xTe forms between CdTe and Te-rich layers, giving a structure like CdTe/CdxHg1-xTe/Te. High-resolution electron microscopy reveals that the CdxHg 1-xTe layer has an epitaxial relationship with the CdTe. No Cd xHg1-xTe layer has been observed in bromine/methanol-etched samples or samples with intentionally deposited Te layers.

Original languageAmerican English
Pages119-124
Number of pages6
DOIs
StatePublished - 2003
EventCompound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California
Duration: 22 Apr 2003 → 25 Apr 2003

Conference

ConferenceCompound Semiconductor Photovoltaics: Materials Research Society Symposium
CitySan Francisco, California
Period22/04/03 → 25/04/03

NLR Publication Number

  • NREL/CP-520-33952

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